IRFU1018EPBF Specifications

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:8.4mOhm @ 47A, 10V
• Vgs(th) (Max) @ Id:4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2290 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):110W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:IPAK (TO-251AA)
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA