IRF6662TRPBF Specifications

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:8.3A (Ta), 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:22mOhm @ 8.2A, 10V
• Vgs(th) (Max) @ Id:4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2.8W (Ta), 89W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DIRECTFET™ MZ
• Package / Case:DirectFET™ Isometric MZ