SSM5G10TU(TE85L,F) Specifications

• Series:U-MOSIII
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4V
• Rds On (Max) @ Id, Vgs:213mOhm @ 1A, 4V
• Vgs(th) (Max) @ Id:1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 4 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 10 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:UFV
• Package / Case:6-SMD (5 Leads), Flat Lead