SI2365EDS-T1-GE3 Specifications

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:32mOhm @ 4A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:36 nC @ 8 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):1W (Ta), 1.7W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236
• Package / Case:TO-236-3, SC-59, SOT-23-3