SI8823EDB-T2-E1 Specifications

• Series:TrenchFET® Gen III
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:95mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):900mW (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
• Package / Case:4-XFBGA